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File name: | blm6g10-30_blm6g10-30g.pdf [preview blm6g10-30 blm6g10-30g] |
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Descr: | . Electronic Components Datasheets Active components Transistors Philips blm6g10-30_blm6g10-30g.pdf |
Group: | Electronics > Components > Transistors |
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File name blm6g10-30_blm6g10-30g.pdf BLM6G10-30; BLM6G10-30G W-CDMA 860 MHz - 960 MHz power MMIC Rev. 2 -- 1 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1). Table 1. Application information Typical RF performance at Th = 25 C. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR (MHz) (V) (W) (dB) (%) (dBc) (dBc) 2-carrier W-CDMA f1 = 935; f2 = 945 28 2 29 11.5 48.5[1] 52[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical 2-carrier W-CDMA performance at a frequency of 940 MHz: Average output power = 2 W Gain = 29 dB (typ) Efficiency = 11.5 % IMD3 = 48.5 dBc ACPR = 52 dBc Integrated temperature compensated bias Excellent thermal stability Biasing of individual stages is externally accessible Integrated ESD protection Small component size, very suitable for PA size reduction On-chip matching (input matched to 50 , output partially matched) High power gain Designed for broadband operation (860 MHz to 960 MHz) NXP Semiconductors BLM6G10-30; BLM6G10-30G W-CDMA 860 MHz - 960 MHz power MMIC 2. Pinning information 2.1 Pinning BLM6G10-30 BLM6G10-30G GND 1 16 GND VDS1 2 15 n.c. n.c. 3 |
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